基于横向DMOS结构的横向双极晶体管高电压和高电流增益的实验研究

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509483

M. A. Shibib

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引用次数: 2

摘要

介绍了采用低成本BiCMOS技术制备的基于横向DMOS结构的横向高压NPN晶体管的实验结果。典型器件的共发射极电流增益对于横向器件约为300，而对于垂直器件约为100。侧向NPN器件的发射极到集电极击穿电压分别为30伏和70伏，具体取决于集电极区域的长度。

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Experimental investigation of high voltage and high current gain of a lateral bipolar transistor based on a lateral DMOS structure

Experimental results of a lateral high voltage NPN transistor based on a lateral DMOS structure fabricated in a low cost power BiCMOS technology are presented. Common-emitter current gain of typical devices were about 300 for the lateral devices compared to about 100 for a vertical device. The lateral NPN devices had emitter to collector breakdown voltages of 30 and 70 volts depending on the length of the collector region.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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