基于AlGaN光电二极管的多光谱紫外传感器的太阳辐射标定

J. Theyirakumar, G. Gopir, B. Yatim, H. Sanusi, P. I. Mahmud, Woon Chin Yek, Kelvin Tan Aik Boo
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引用次数: 1

摘要

基于氮化铝镓(AlGaN)光电二极管设计了一种新的多光谱紫外(UV)传感器,利用太阳紫外辐射的三个区域即紫外A (UVA)、紫外B (UVB)和紫外C (UVC)进行校准。该紫外传感器采用跨阻放大系统设计,测量了马来西亚Bangi(2.92°N, 101.78°E,海拔50 m)太阳直接UVA, UVB和UVC辐射(VA,VB和VC)的直流电压输出。为了进行校准,使用该设计的UV传感器与具有PASCO PASPORT接口的硅基UVA光传感器Xplorer GLX Datalogger同时测量UVA辐射强度IA。得到了多光谱紫外电压与UVA强度之间的线性关系,从而导出了UVA、UVB和UVC辐射强度随多光谱紫外电压的线性方程。根据所得的强度方程,推导出三个紫外区之间的强度比。通过绘制紫外电压随时间的变化曲线,进一步分析了多光谱紫外辐射电压。因此,基于AlGaN光电二极管的多光谱紫外传感器能够成功校准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Calibration of a newly designed multispectral ultraviolet sensor based on AlGaN photodiodes using solar radiation
A newly designed multispectral ultraviolet (UV) sensor based on aluminium gallium nitride (AlGaN) photodiodes was calibrated using the solar UV radiation in three regions namely ultraviolet A (UVA), ultraviolet B (UVB) and ultraviolet C (UVC). This UV sensor which was designed with a transimpedance amplifier system, measures the dc voltage output of direct solar UVA, UVB and UVC radiation (VA,VB and VC) in Bangi, Malaysia (2.92 °N, 101.78 °E, 50 m above sea level). For calibration, this designed UV sensor were used to measure simultaneously with a silicon-based UVA Light Sensor designed with PASCO PASPORT interface, Xplorer GLX Datalogger which measures the UVA radiation intensity, IA. As a result, a linear relationships between the multispectral UV voltages and UVA intensity were obtained and thus, three linear equations of UVA, UVB and UVC radiation intensity as a function of the multispectral UV voltages were derived. Intensity ratios between the three UV region were deduced from the derived intensity equations. The multispectral UV radiation voltages were further analyzed by plotting the UV voltage values with time. Thus, the multispectral UV sensor based on the AlGaN photodiodes was able to be calibrated successfully.
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