{"title":"氧化温度对ga2o3薄膜在GaN上热生长的影响","authors":"Limin Lin, Yi Luo, P. Lai, K. Lau","doi":"10.1109/EDSSC.2005.1635346","DOIUrl":null,"url":null,"abstract":"The effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750°C, 800°C and 850°C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800°C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850°C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800°C as compared with 750°C and 850°C. Lastly, after the sample oxidized at 800°C was annealed at 850°C for 10 min, the quality of its oxide was significantly degraded.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"121 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Effects of oxidation temperature on Ga2O3film thermally grown on GaN\",\"authors\":\"Limin Lin, Yi Luo, P. Lai, K. Lau\",\"doi\":\"10.1109/EDSSC.2005.1635346\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750°C, 800°C and 850°C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800°C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850°C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800°C as compared with 750°C and 850°C. Lastly, after the sample oxidized at 800°C was annealed at 850°C for 10 min, the quality of its oxide was significantly degraded.\",\"PeriodicalId\":429314,\"journal\":{\"name\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"volume\":\"121 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE Conference on Electron Devices and Solid-State Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2005.1635346\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635346","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of oxidation temperature on Ga2O3film thermally grown on GaN
The effects of oxidation temperature on thermally oxidized GaN film were investigated. The GaN wafers were oxidzied at 750°C, 800°C and 850°C respectively. The electrical characteristics and interface quality of MOS capacitors were compared among different oxidation temperatures. The sample oxidized at 800°C presented best current-voltage, capacitance-voltage characteristics and smoothest surface morphology, while the higher oxidation temperature of 850°C gave best interface quality. The electrical breakdown field was increased by one order of magnitude when the sample was oxidized at 800°C as compared with 750°C and 850°C. Lastly, after the sample oxidized at 800°C was annealed at 850°C for 10 min, the quality of its oxide was significantly degraded.
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