{"title":"大功率反导GTO隔离结构优化","authors":"T. Shinohe, M. Asaka, K. Takigami, H. Ohashi","doi":"10.1109/PESC.1988.18224","DOIUrl":null,"url":null,"abstract":"High-power reverse conducting gate-turn-off thyristors (RC-GTOs) enable simpler circuits to be designed. However, GTO and antiparallel diode integration causes turn-off-capability degradation and undesirable GTO triggering by excess carriers flowing from the diode section. An isolation structure that uses a p-base grooving method and a selective lifetime control technique to solve this problem is investigated. A novel isolation structure that contains the drain region is also described. A high-power RC-GTO (4.5 kV, 1000 A) that is based on the optimized isolation structure is presented. The fabrication and electrical characteristics of the device are described.<<ETX>>","PeriodicalId":283605,"journal":{"name":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Isolation structure optimization for high power reverse conducting GTO\",\"authors\":\"T. Shinohe, M. Asaka, K. Takigami, H. Ohashi\",\"doi\":\"10.1109/PESC.1988.18224\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-power reverse conducting gate-turn-off thyristors (RC-GTOs) enable simpler circuits to be designed. However, GTO and antiparallel diode integration causes turn-off-capability degradation and undesirable GTO triggering by excess carriers flowing from the diode section. An isolation structure that uses a p-base grooving method and a selective lifetime control technique to solve this problem is investigated. A novel isolation structure that contains the drain region is also described. A high-power RC-GTO (4.5 kV, 1000 A) that is based on the optimized isolation structure is presented. The fabrication and electrical characteristics of the device are described.<<ETX>>\",\"PeriodicalId\":283605,\"journal\":{\"name\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1988.18224\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1988.18224","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Isolation structure optimization for high power reverse conducting GTO
High-power reverse conducting gate-turn-off thyristors (RC-GTOs) enable simpler circuits to be designed. However, GTO and antiparallel diode integration causes turn-off-capability degradation and undesirable GTO triggering by excess carriers flowing from the diode section. An isolation structure that uses a p-base grooving method and a selective lifetime control technique to solve this problem is investigated. A novel isolation structure that contains the drain region is also described. A high-power RC-GTO (4.5 kV, 1000 A) that is based on the optimized isolation structure is presented. The fabrication and electrical characteristics of the device are described.<>
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