谐振式全桥逆变器中mosfet的可靠性建模

2018 IEEE XXVII International Scientific Conference Electronics - ET Pub Date : 2018-09-01 DOI:10.1109/ET.2018.8549590

Dimitar Zlatev, A. Georgiev, T. Papanchev, J. Garipova, Tereza Stefanova Stefanova

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引用次数: 7

摘要

本文研究了负载电路中具有串联谐振的全桥逆变器中MOSFET晶体管的可靠性建模。考虑谐振过程及其参数，建立了逆变器中晶体管可靠性的模型。mosfet的可靠性与某些谐振电路参数的关系以图形形式显示。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability Modeling of MOSFETs in Resonant Full Bridge Inverter

This paper concerns reliability modeling of the MOSFET transistors in a full bridge inverter with series resonance at the load circuit. Taking into account the resonant process and its parameters a model concerning transistors reliability in such an inverter is obtained. The dependencies of the MOSFETs reliability on some of the resonant circuit parameters are shown in a graphical form.

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2018 IEEE XXVII International Scientific Conference Electronics - ET

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