摘要:描述EEPROM作为一种普遍存在的PUF源的特性

Chris Pavlina, Jacob I. Torrey, Kyle J. Temkin
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引用次数: 1

摘要

物理不可克隆函数(puf)越来越多地被用作硬件设备中的安全原语。puf用于授权对单个硬件设备进行身份验证,并支持派生特定于硬件的密钥。通过将硅器件中的工艺变化作为对挑战的不可预测但可重复的唯一响应的来源,puf可以提供通常需要专用安全硬件(例如tpm)的功能。介绍了一种基于电可擦可编程rom (eeprom)写时序的PUF源。EEPROM单元通过在存储器单元栅极内逐渐积累电荷载流子的过程进行编程。许多eeprom需要相对较长的写入周期来建立稳定的存储器内容。如果写入操作没有持续所需的时间,则存储在内存中的结果值取决于受进程变化严重影响的物理特性。由于每个PC DRAM模块上都有eeprom,并通过标准化的I2C总线暴露给软件,因此这种PUF源具有无处不在和软件可访问的潜力,而无需对现成的硬件进行任何修改。已经测试了一组eeprom是否适合此PUF。构建了六种设备类型中每一种的64个数组,并测试了可用熵、HDinter和HDintra位。具有粗特征尺寸的eeprom相对于内存大小产生大约90%的可用熵,HDintra大多在45-55%之间,HDintra大多在7%以下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Abstract: Characterizing EEPROM for usage as a ubiquitous PUF source
Physical Unclonable Functions (PUFs) are increasingly being employed as a security primitive in hardware devices. PUFs are used to both empower authentication of individual hardware devices and support derivation of hardware-specific keys. By exposing the process variation in silicon devices as a source of the unpredictable but repeatable unique response to a challenge, PUFs can provide features that typically need dedicated security hardware (e.g., TPMs). A novel PUF source based on the write timing of Electrically Eraseable Programmable ROMs (EEPROMs) is demonstrated in certain process ICs. EEPROM cells are programmed via a process which gradually accrues charge carriers within the gate of a memory cell. Many EEPROMs require relatively long write cycles to establish stable memory contents. If a write operation is not sustained for the requisite duration, the resulting value stored in memory is dependent on physical properties heavily impacted by process variation. As EEPROMs are found on every PC DRAM module and exposed to software via a standardized I2C bus, this PUF source has potential to be both ubiquitous and software-accessible without any modifications to the off-the-shelf hardware. A set of EEPROMs have been tested for suitability for this PUF. Arrays of 64 of each of six device types were constructed and tested for bits of usable entropy, HDinter, and HDintra. The EEPROMs with coarse feature size produced around 90% usable entropy relative to memory size, with HDintra mostly around 45–55% and HDintra mostly under 7%.
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