耦合线曲率角对带通负群延迟特性的影响

2022 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC) Pub Date : 2022-09-01 DOI:10.1109/APEMC53576.2022.9888534

T. Gu, Xiaoyu Huang, F. Wan, B. Ravelo, Q. Ji

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引用次数: 0

摘要

本文研究了c型圆弯曲耦合线(CL)微带电路的带通(BP)负群延迟(NGD)效应。创新的BP-NGD电路的灵感来自锂微带拓扑结构。为了验证BP-NGD概念的可行性，对模拟进行了实证研究。设计并模拟了180°和任意角度CC微带结构的不同性能。此外，还通过全波模拟进行了精确的灵敏度分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Coupled-Line Curvature Angle Effect on Bandpass Negative Group Delay Characteristics

This paper investigates on the bandpass (BP) negative group delay (NGD) effect from CC-shaped circular curved coupled-line (CL) microstrip circuit. The innovative BP-NGD circuit is inspired from the li-microstrip topology. To verify the BP-NGD concept feasibility, an empirical study corroborating simulations is examined. Different properties of 180° and arbitrary angle CC microstrip structures are designed and simulated. Moreover, accurate sensitivity analyses were also performed by means of full-wave simulations.

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2022 Asia-Pacific International Symposium on Electromagnetic Compatibility (APEMC)

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