芯片上混合电压SOI系统的有源衬底驱动器

S. Jackson, B. Blalock, M. Mojarradi, H.W. Li
{"title":"芯片上混合电压SOI系统的有源衬底驱动器","authors":"S. Jackson, B. Blalock, M. Mojarradi, H.W. Li","doi":"10.1109/SSMSD.2000.836451","DOIUrl":null,"url":null,"abstract":"High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and \"shorts-out\" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.","PeriodicalId":166604,"journal":{"name":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An active substrate driver for mixed-voltage SOI systems on a chip\",\"authors\":\"S. Jackson, B. Blalock, M. Mojarradi, H.W. Li\",\"doi\":\"10.1109/SSMSD.2000.836451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and \\\"shorts-out\\\" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.\",\"PeriodicalId\":166604,\"journal\":{\"name\":\"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-02-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSMSD.2000.836451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Southwest Symposium on Mixed-Signal Design (Cat. No.00EX390)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSMSD.2000.836451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

SOI中的高压晶体管与传统的低压晶体管共存,使得混合电压(高压和低压)片上系统的发展成为可能。然而,寄生后通道晶体管在这些混合电压单芯片系统中是一个关键问题。高压的存在会造成一种情况,在这种情况下,寄生的后通道器件打开并“短路”顶层器件,从而导致系统的功能故障。设计了一种有源衬底驱动器,可自动调整衬底偏置电压到一定水平,确保反向通道器件保持关闭状态。有源衬底驱动器还应有助于补偿由温度、老化和辐照效应引起的后通道晶体管阈值电压的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An active substrate driver for mixed-voltage SOI systems on a chip
High-voltage transistors in SOI that coexist with traditional low-voltage transistors enable the development of mixed-voltage (high-voltage and low-voltage) systems-on-a-chip. The parasitic back-channel transistor, however, is a critical issue in these mixed-voltage single-chip systems. The presence of high-voltage can create a situation in which the parasitic back-channel device turns on and "shorts-out" the top device inducing functional failure of the system. An active substrate driver has been designed that automatically adjusts the substrate bias voltage to a level ensuring the back-channel devices remain off. The active substrate driver should also help compensate for shifts in back-channel transistor threshold voltages induced by temperature, aging, and irradiation effects.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信