高性能GaSb/InAs超晶格长波红外焦平面阵列

2012 Photonics Global Conference (PGC) Pub Date : 2012-12-01 DOI:10.1109/PGC.2012.6458021

S. Gunapala, S. Rafol, D. Ting, A. Soibel, J. Liu, A. Khoshakhlagh, S. Keo, J. Mumolo

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引用次数: 0

摘要

我们描述了基于InAs/GaSb超晶格吸收体的¼VGA格式长波红外焦平面阵列的演示，该吸收体被电子阻挡和空穴阻挡单极势垒包围。基于该互补屏障红外探测器设计的8.8 μm截止焦平面无增透涂层，在80K工作温度、300k背景和f/2冷阻条件下产生18.6 mK的等效噪声差温。

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High performance GaSb/InAs superlattice long-wave infrared focal plane array

We describe the demonstration of a ¼ VGA format long-wavelength infrared focal plane array based on an InAs/GaSb superlattice absorber surrounded by an electron-blocking and a hole-blocking unipolar barrier. An 8.8 μm cutoff focal plane without antireflection coating based on this complementary barrier infrared detector design has yielded noise equivalent differential temperature of 18.6 mK at operating temperature of 80K, with 300 K background and f/2 cold-stop.

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2012 Photonics Global Conference (PGC)

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