用耦合电磁波与自旋波的电路模型揭开非线性射频磁器件的神秘面纱

Y. Wang
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摘要

非线性射频磁器件,如频率选择限制器(FSL)可以为射频前端的鲁棒性提供巨大的好处,因为它只对强信号出现的频率设置功率限制,而允许不同频率的弱信号通过。它的行为涉及电磁波与铁氧体材料中自旋波振荡的耦合,没有传统的模型可以提供其性能的定量预测。在这次演讲中,我们将介绍一个用于FSL器件设计的非线性电路模型。FSL器件的主要磁行为被转化为等效电路,其参数严格由基础物理确定。自旋运动和铁磁共振(FMR)由RLC并行电路模拟,参数来源于Polder张量和Kittel方程。基于量子自旋理论,通过在相邻RLC电路之间添加电感来模拟自旋之间的交换耦合。从ω处的信号到ω/2处的自旋波的非线性交叉频率耦合用一个钟摆模型来表示,该模型可以预测自旋的参数振荡。通过级联电路单元来描述磁性材料内部的自旋波传播,最后加入传输线参数来描述射频信号的传播。仿真结果与已发表的测量结果吻合,该模型成功地预测了器件的阈值功率电平、非线性插入损耗、时延和频率选择性。该建模方法为模拟某些射频器件中的强非线性波物质耦合开辟了新的范例,其中器件的宏观行为与纳米尺度上发生的量子物理有关。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Demystify Nonlinear RF Magnetic Devices with Circuit Models Coupling Electromagnetic Waves to Spin Waves
Nonlinear RF magnetic devices such as frequency selective limiters (FSL) can offer tremendous amount of benefit to the robustness of a RF front-end as it sets a power limit only to the frequencies where strong signal presents while allowing weak signals at different frequencies to pass. Its behavior involves coupling of electromagnetic waves to spin waves oscillations in ferrite material on which no traditional model is available to provide quantitive prediction of its performance. In this talk, we will present a nonlinear circuit model for FSL device design. The dominant magnetic-behaviors of FSL devices are translated into equivalent circuits with parameters rigorously determined from fundamental physics. The spin motions as well as the ferromagnetic resonance (FMR) are modeled by RLC parallel circuits with parameters derived from Polder’s tensor and Kittel’s equations. The exchange coupling between spins is modeled by an inductor added between adjacent RLC circuits based on quantum spin theory. The nonlinear cross-frequency coupling from signal at ω to spin waves at ω/2 is represented by a pendulum model that predicts the parametric oscillations of spins. The circuit units are cascaded to describe the spin wave propagation inside the magnetic material, and transmission line parameters are added finally to describe the RF signal propagation. The simulation results match the measurement results published, and the model successfully predicts the threshold power level, nonlinear insertion loss, time delay, and frequency selectivity of the device. The modeling approach opens a new paradigm in simulating strong, nonlinear wave-matter coupling in certain RF devices, in which the macroscopic behavior of the device is linked to quantum physics that is happening in nanometer dimensions.
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