有机中间层内嵌薄膜电容器提高电源完整性

IEEE CPMT Symposium Japan 2014 Pub Date : 2014-11-01 DOI:10.1109/ICSJ.2014.7009625

M. Yoshizawa, Seisei Oyamada, A. Hattori, T. Nakura, K. Asada

{"title":"有机中间层内嵌薄膜电容器提高电源完整性","authors":"M. Yoshizawa, Seisei Oyamada, A. Hattori, T. Nakura, K. Asada","doi":"10.1109/ICSJ.2014.7009625","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrate our STO thin film decoupling capacitor embedded in organic interposer is effective for reduction of resonant power supply noise of LSI. By comparison of Shmoo plots with on-chip MOS capacitor, significant contributions of STO capacitor to higher operable frequency and lower power supply voltage are shown.","PeriodicalId":362502,"journal":{"name":"IEEE CPMT Symposium Japan 2014","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Improvement of power integrity with thin film capacitors embedded in organic interposer\",\"authors\":\"M. Yoshizawa, Seisei Oyamada, A. Hattori, T. Nakura, K. Asada\",\"doi\":\"10.1109/ICSJ.2014.7009625\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we demonstrate our STO thin film decoupling capacitor embedded in organic interposer is effective for reduction of resonant power supply noise of LSI. By comparison of Shmoo plots with on-chip MOS capacitor, significant contributions of STO capacitor to higher operable frequency and lower power supply voltage are shown.\",\"PeriodicalId\":362502,\"journal\":{\"name\":\"IEEE CPMT Symposium Japan 2014\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE CPMT Symposium Japan 2014\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSJ.2014.7009625\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE CPMT Symposium Japan 2014","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSJ.2014.7009625","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

在本文中，我们证明了我们的STO薄膜去耦电容器嵌入有机中间层是有效的降低谐振电源噪声的LSI。通过与片上MOS电容的Shmoo图比较，表明了STO电容对提高工作频率和降低电源电压的显著贡献。

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Improvement of power integrity with thin film capacitors embedded in organic interposer

In this paper, we demonstrate our STO thin film decoupling capacitor embedded in organic interposer is effective for reduction of resonant power supply noise of LSI. By comparison of Shmoo plots with on-chip MOS capacitor, significant contributions of STO capacitor to higher operable frequency and lower power supply voltage are shown.

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IEEE CPMT Symposium Japan 2014

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