{"title":"用量子化学模拟方法计算合金元素对二氧化铪电物理特性的影响","authors":"A. Reznik, A. Rezvanov","doi":"10.29003/m3080.mmmsec-2022/97-99","DOIUrl":null,"url":null,"abstract":"The paper considers the effect of 20 alloying elements on the electrical properties of three structural modifications of hafnium dioxide (HfO2), in particular, on the dielectric constant and remanent polarization. Various software algorithms for matrix diagonalization are compared.","PeriodicalId":151453,"journal":{"name":"Mathematical modeling in materials science of electronic component","volume":"275 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"CALCULATION OF THE INFLUENCE OF ALLOYING ELEMENTS ON THE ELECTROPHYSICAL CHARACTERISTICS OF HAFNIUM DIOXIDE USING QUANTUM-CHEMICAL SIMULATION METHODS\",\"authors\":\"A. Reznik, A. Rezvanov\",\"doi\":\"10.29003/m3080.mmmsec-2022/97-99\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper considers the effect of 20 alloying elements on the electrical properties of three structural modifications of hafnium dioxide (HfO2), in particular, on the dielectric constant and remanent polarization. Various software algorithms for matrix diagonalization are compared.\",\"PeriodicalId\":151453,\"journal\":{\"name\":\"Mathematical modeling in materials science of electronic component\",\"volume\":\"275 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Mathematical modeling in materials science of electronic component\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.29003/m3080.mmmsec-2022/97-99\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Mathematical modeling in materials science of electronic component","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.29003/m3080.mmmsec-2022/97-99","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
CALCULATION OF THE INFLUENCE OF ALLOYING ELEMENTS ON THE ELECTROPHYSICAL CHARACTERISTICS OF HAFNIUM DIOXIDE USING QUANTUM-CHEMICAL SIMULATION METHODS
The paper considers the effect of 20 alloying elements on the electrical properties of three structural modifications of hafnium dioxide (HfO2), in particular, on the dielectric constant and remanent polarization. Various software algorithms for matrix diagonalization are compared.
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