{"title":"亚带隙光照射下硅基上Al2O3/AlGaN/GaN MOSHEMTs的电流崩塌降低","authors":"Kailing Pan, Huaxing Jiang, W. Tang, K. Lau","doi":"10.1109/CSW55288.2022.9930448","DOIUrl":null,"url":null,"abstract":"This paper reports the suppression of current collapse in Al<inf>2</inf>O<inf>3</inf>/AlGaN/GaN MOSHEMTs on Si with sub-bandgap light illumination. Both the gate pulsed I<inf>DS</inf>-V<inf>GS</inf> and double pulsed I<inf>DS</inf>-V<inf>DS</inf> characteristics under 405-nm light illumination reveal that the sub-bandgap light illumination can effectively mitigate the electron trapping effect in the gate stack, thereby reducing the current collapse, despite a potential cost of increased off-state leakage current.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Current Collapse Reduction in Al2O3/AlGaN/GaN MOSHEMTs on Si with Sub-bandgap Light Illumination\",\"authors\":\"Kailing Pan, Huaxing Jiang, W. Tang, K. Lau\",\"doi\":\"10.1109/CSW55288.2022.9930448\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports the suppression of current collapse in Al<inf>2</inf>O<inf>3</inf>/AlGaN/GaN MOSHEMTs on Si with sub-bandgap light illumination. Both the gate pulsed I<inf>DS</inf>-V<inf>GS</inf> and double pulsed I<inf>DS</inf>-V<inf>DS</inf> characteristics under 405-nm light illumination reveal that the sub-bandgap light illumination can effectively mitigate the electron trapping effect in the gate stack, thereby reducing the current collapse, despite a potential cost of increased off-state leakage current.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSW55288.2022.9930448\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSW55288.2022.9930448","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current Collapse Reduction in Al2O3/AlGaN/GaN MOSHEMTs on Si with Sub-bandgap Light Illumination
This paper reports the suppression of current collapse in Al2O3/AlGaN/GaN MOSHEMTs on Si with sub-bandgap light illumination. Both the gate pulsed IDS-VGS and double pulsed IDS-VDS characteristics under 405-nm light illumination reveal that the sub-bandgap light illumination can effectively mitigate the electron trapping effect in the gate stack, thereby reducing the current collapse, despite a potential cost of increased off-state leakage current.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
