无晶体管自旋转矩传输MRAM设计

2015 IEEE Magnetics Conference (INTERMAG) Pub Date : 2015-05-11 DOI:10.1109/INTMAG.2015.7156504

W. Wang

{"title":"无晶体管自旋转矩传输MRAM设计","authors":"W. Wang","doi":"10.1109/INTMAG.2015.7156504","DOIUrl":null,"url":null,"abstract":"The magnetic random accessible memory (MRAM) is positioned as one of the potential candidates for future universal memory[1]. Although MRAM's endurance outperforms most of the competing technologies, MRAM has not demonstrated strong advantage on area density [2]. Furthermore, recent rapid progress on area density in competing technologies, such as, aggressive scaling on Phase Change Memory [3], multiple-level / multi-bit charge trapping flash memories [4], makes it more important to improve the MRAM array density.","PeriodicalId":381832,"journal":{"name":"2015 IEEE Magnetics Conference (INTERMAG)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Transistor-less Spin Torque Transfer MRAM design\",\"authors\":\"W. Wang\",\"doi\":\"10.1109/INTMAG.2015.7156504\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The magnetic random accessible memory (MRAM) is positioned as one of the potential candidates for future universal memory[1]. Although MRAM's endurance outperforms most of the competing technologies, MRAM has not demonstrated strong advantage on area density [2]. Furthermore, recent rapid progress on area density in competing technologies, such as, aggressive scaling on Phase Change Memory [3], multiple-level / multi-bit charge trapping flash memories [4], makes it more important to improve the MRAM array density.\",\"PeriodicalId\":381832,\"journal\":{\"name\":\"2015 IEEE Magnetics Conference (INTERMAG)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE Magnetics Conference (INTERMAG)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INTMAG.2015.7156504\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE Magnetics Conference (INTERMAG)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INTMAG.2015.7156504","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

磁性随机存取存储器(MRAM)被定位为未来通用存储器的潜在候选者之一[1]。虽然MRAM的续航能力优于大多数竞争技术，但MRAM在面积密度上并没有表现出很强的优势[2]。此外，最近竞争技术在面积密度方面的快速进展，如相变存储器的积极缩放[3]，多电平/多比特电荷捕获闪存[4]，使得提高MRAM阵列密度变得更加重要。

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Transistor-less Spin Torque Transfer MRAM design

The magnetic random accessible memory (MRAM) is positioned as one of the potential candidates for future universal memory[1]. Although MRAM's endurance outperforms most of the competing technologies, MRAM has not demonstrated strong advantage on area density [2]. Furthermore, recent rapid progress on area density in competing technologies, such as, aggressive scaling on Phase Change Memory [3], multiple-level / multi-bit charge trapping flash memories [4], makes it more important to improve the MRAM array density.

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2015 IEEE Magnetics Conference (INTERMAG)

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