基于非晶铟镓锌氧化物薄膜晶体管的pH传感器扩展栅结构的演示

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437392

S. Iwamatsu, K. Takechi, H. Tanabe, Yoshiyuki Watanabe

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引用次数: 0

摘要

为了提高基于非晶铟镓锌氧化物薄膜晶体管(a- ingazno TFT)顶栅效应的高灵敏度pH传感器的可靠性，我们提出了一种具有ALD-AlOx/溅射- taox层状顶栅绝缘体和Ti扩展栅电极的扩展栅a- ingazno TFT pH传感器。与我们之前的绝缘栅a-InGaZnO TFT pH传感器不同，我们不需要将TFT传感器器件浸入溶液中，因此我们可以期望提高其可靠性。我们讨论了扩展栅a- ingazno TFT pH传感器的初步结果，包括其pH敏感性和对pH变化0.05的响应。

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Demonstration of extended-gate structure for pH sensors based on amorphous indium-gallium-zinc oxide thin-film transistors

For the purpose of improving reliability of our high-sensitivity pH sensor based on the top-gate effect in amorphous indium-gallium-zinc oxide thin-film transistor (a-InGaZnO TFT), we propose extended-gate a-InGaZnO TFT pH sensor having an ALD-AlOx/sputtered-TaOx layered top-gate insulator and a Ti extended-gate electrode. Unlike our previous insulated-gate a-InGaZnO TFT pH sensor, we do not need to immerse the TFT sensor device into the solution, and thus we could expect improvement of its reliability. We discuss our primary results for the extended-gate a-InGaZnO TFT pH sensor, including its pH sensitivity and response to a pH change of 0.05.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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