R. Kohler, A. Tredicucci, F. Beltram, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Iotti, F. Rossi
{"title":"太赫兹半导体异质结构激光器","authors":"R. Kohler, A. Tredicucci, F. Beltram, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Iotti, F. Rossi","doi":"10.1109/CLEO.2002.1034500","DOIUrl":null,"url":null,"abstract":"Injection lasers based on interminiband transitions in GaAs/AlGaAs heterostructures are operated in the THz range. Single-mode emission is achieved at 4.4THz, with output powers of 2.5mW and thresholds of few hundred A/cm/sup 2/ up to 50K.","PeriodicalId":332139,"journal":{"name":"Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"139","resultStr":"{\"title\":\"Terahertz semiconductor-heterostructure lasers\",\"authors\":\"R. Kohler, A. Tredicucci, F. Beltram, H. Beere, E. Linfield, A. Davies, D. Ritchie, R. Iotti, F. Rossi\",\"doi\":\"10.1109/CLEO.2002.1034500\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Injection lasers based on interminiband transitions in GaAs/AlGaAs heterostructures are operated in the THz range. Single-mode emission is achieved at 4.4THz, with output powers of 2.5mW and thresholds of few hundred A/cm/sup 2/ up to 50K.\",\"PeriodicalId\":332139,\"journal\":{\"name\":\"Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"139\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CLEO.2002.1034500\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEO.2002.1034500","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Injection lasers based on interminiband transitions in GaAs/AlGaAs heterostructures are operated in the THz range. Single-mode emission is achieved at 4.4THz, with output powers of 2.5mW and thresholds of few hundred A/cm/sup 2/ up to 50K.
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