{"title":"铁离子轰击在形成高阻InGaAs层中的作用和机理","authors":"S. C. Subramaniam, A. Rezazadeh","doi":"10.1109/EMICC.2006.282738","DOIUrl":null,"url":null,"abstract":"The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers\",\"authors\":\"S. C. Subramaniam, A. Rezazadeh\",\"doi\":\"10.1109/EMICC.2006.282738\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282738\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Role and Mechanism of Fe-ion Bombardment in creating highly resistive InGaAs layers
The electrical behavior of InGaAs following Fe-ion bombardment at 77K temperature in n- and p-type InGaAs structures have been investigated in this paper. Maximum resistivity of ~4times106 Omega/sq and ~7times106 Omega/sq at optimum annealing temperatures of ~250 and 600degC has been determined for p- and n-type InGaAs materials, respectively. These thermally stable high resistive regions in InGaAs due to Fe-ion bombardment are close to the intrinsic limit of InGaAs. Fe acceptor ionization energy of ~0.35 eV have been determined from temperature-dependant study. Good agreement has been observed between the experimental results and that of the physical model developed to observe the effects of Fe+ in InGaAs material
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