{"title":"用微型薄膜电流传感器测量焊线电流","authors":"H. Hirai, Y. Kasho, M. Tsukuda, I. Omura","doi":"10.1109/ISPSD.2012.6229079","DOIUrl":null,"url":null,"abstract":"Bonding wire current measurement technique has been highly desired to analyze failure phenomena, such as short circuit and avalanche destruction of IGBT and power diode. This paper challenged to measure bonding wire current distribution in an IGBT module with the multiple tiny film current sensors and the digital calculation technique. The authors successfully measured bonding wire current under a single shot measurement.","PeriodicalId":371298,"journal":{"name":"2012 24th International Symposium on Power Semiconductor Devices and ICs","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Bonding wire current measurement with tiny film current sensors\",\"authors\":\"H. Hirai, Y. Kasho, M. Tsukuda, I. Omura\",\"doi\":\"10.1109/ISPSD.2012.6229079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Bonding wire current measurement technique has been highly desired to analyze failure phenomena, such as short circuit and avalanche destruction of IGBT and power diode. This paper challenged to measure bonding wire current distribution in an IGBT module with the multiple tiny film current sensors and the digital calculation technique. The authors successfully measured bonding wire current under a single shot measurement.\",\"PeriodicalId\":371298,\"journal\":{\"name\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 24th International Symposium on Power Semiconductor Devices and ICs\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2012.6229079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 24th International Symposium on Power Semiconductor Devices and ICs","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2012.6229079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bonding wire current measurement with tiny film current sensors
Bonding wire current measurement technique has been highly desired to analyze failure phenomena, such as short circuit and avalanche destruction of IGBT and power diode. This paper challenged to measure bonding wire current distribution in an IGBT module with the multiple tiny film current sensors and the digital calculation technique. The authors successfully measured bonding wire current under a single shot measurement.
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