{"title":"采用多任务InP-based HEMT的40ghz调制1.3 μ m光信号外差接收器","authors":"C. Rauscher, K. Williams","doi":"10.1109/MWSYM.1992.188273","DOIUrl":null,"url":null,"abstract":"Heterodyne reception of a millimeter-wave modulated 1.3- mu m optical carrier signal is achieved with an InP-based HEMT (high-electron-mobility transistor) that performs four simultaneous functions all in one. The functions are carrier demodulation, generation of a local oscillation signal, frequency multiplication thereof, and transistor-internal downconversion of the modulation signal to a lower intermediate frequency band. The measured performance characteristics of the heterodyne receiver are reported together with results derived from a systematic study of optical detection and mixing properties of a HEMT by itself, observed as functions of modulation signal frequencies up through 40 GHz and bias conditions.<<ETX>>","PeriodicalId":165665,"journal":{"name":"1992 IEEE Microwave Symposium Digest MTT-S","volume":"171 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A heterodyne receiver for 40-GHz-modulated 1.3- mu m optical signals using a multi-tasked InP-based HEMT\",\"authors\":\"C. Rauscher, K. Williams\",\"doi\":\"10.1109/MWSYM.1992.188273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Heterodyne reception of a millimeter-wave modulated 1.3- mu m optical carrier signal is achieved with an InP-based HEMT (high-electron-mobility transistor) that performs four simultaneous functions all in one. The functions are carrier demodulation, generation of a local oscillation signal, frequency multiplication thereof, and transistor-internal downconversion of the modulation signal to a lower intermediate frequency band. The measured performance characteristics of the heterodyne receiver are reported together with results derived from a systematic study of optical detection and mixing properties of a HEMT by itself, observed as functions of modulation signal frequencies up through 40 GHz and bias conditions.<<ETX>>\",\"PeriodicalId\":165665,\"journal\":{\"name\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"volume\":\"171 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 IEEE Microwave Symposium Digest MTT-S\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1992.188273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 IEEE Microwave Symposium Digest MTT-S","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1992.188273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A heterodyne receiver for 40-GHz-modulated 1.3- mu m optical signals using a multi-tasked InP-based HEMT
Heterodyne reception of a millimeter-wave modulated 1.3- mu m optical carrier signal is achieved with an InP-based HEMT (high-electron-mobility transistor) that performs four simultaneous functions all in one. The functions are carrier demodulation, generation of a local oscillation signal, frequency multiplication thereof, and transistor-internal downconversion of the modulation signal to a lower intermediate frequency band. The measured performance characteristics of the heterodyne receiver are reported together with results derived from a systematic study of optical detection and mixing properties of a HEMT by itself, observed as functions of modulation signal frequencies up through 40 GHz and bias conditions.<>
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