{"title":"氮、氩气氛下4H碳化硅AlN退火帽的比较","authors":"M. Derenge, K. Jones, K. Kirchner, M. Ervin","doi":"10.1109/ISDRS.2003.1272026","DOIUrl":null,"url":null,"abstract":"In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere\",\"authors\":\"M. Derenge, K. Jones, K. Kirchner, M. Ervin\",\"doi\":\"10.1109/ISDRS.2003.1272026\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272026\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272026","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere
In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.
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