电传输用模板硅基纳米线的合成与性能研究

Jae Ho Lee, P. Rogers, M. A. Carpenter, E. Eisenbraun, Yongqiang Xue, R. Geer
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引用次数: 3

摘要

合成了自组装硅纳米线(SiNWs),并将其作为表面金属硅化物形成的模板来研究电子在纳米线表面的传递。采用固-液-固(SLS)生长工艺在硅衬底上直接生长硅纳米线。在氧气过滤的Ar环境中,利用高温处理在Si(100)和(111)衬底上溅射Au催化剂薄膜进行初步合成。SiNW直径大致是生长时间/温度的单调函数。SiNW模板的直径从大约5纳米到180纳米不等。在SLS SiNWs上沉积Ni并进行沉积后的热处理以形成硅化物。将金属硅化物涂覆的纳米线涂在金属图案硅晶片上进行电学表征,电导率提高了几个数量级。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesis and Properties of Templated Si-based Nanowires for Electrical Transport
Self-assembled Si nanowires (SiNWs) have been synthesized and characterized as a template for surface metal silicide formation to investigate electron transport at the nanowire surface. Silicon nanowires were directly grown on silicon substrates via the solid-liquid-solid (SLS) growth process. Preliminary synthesis utilized high-temperature processing of a sputtered Au catalyst film on Si (100) and (111) substrates in an oxygen-filtered Ar ambient. SiNW diameter was a roughly monotonic function of the growth time/temperature. The diameters of the SiNW templates ranged from approximately 5 nm to 180 nm. Ni deposition on the SLS SiNWs and post-deposition thermal processing was carried out for silicide formation. Metal-silicide coated nanowires were dispensed on metal-patterned Si wafers for electrical characterization and exhibited an improvement in conductivity of several orders of magnitude.
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