{"title":"大电流脉冲对集成电路金属化可靠性的影响","authors":"B. Liew, N. Cheung, C. Hu","doi":"10.1109/ITHERM.1988.28668","DOIUrl":null,"url":null,"abstract":"Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulse current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (J/sub p/) is less than 4*10/sup 6/ A/cm/sup 2/. Design rules based on keeping the average current density (J/sub av/) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz.<<ETX>>","PeriodicalId":226424,"journal":{"name":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Effects of high current pulses on integrated circuit metallization reliability\",\"authors\":\"B. Liew, N. Cheung, C. Hu\",\"doi\":\"10.1109/ITHERM.1988.28668\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulse current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (J/sub p/) is less than 4*10/sup 6/ A/cm/sup 2/. Design rules based on keeping the average current density (J/sub av/) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz.<<ETX>>\",\"PeriodicalId\":226424,\"journal\":{\"name\":\"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ITHERM.1988.28668\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"InterSociety Conference on Thermal Phenomena in the Fabrication and Operation of Electronic Components. I-THERM '88","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITHERM.1988.28668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of high current pulses on integrated circuit metallization reliability
Transient heat flow analysis using two-dimensional finite-element method has been used to calculate the temperature rise of aluminum lines on passivated and unpassivated silicon substrates. The results are used to predict the effect of self-heating on the electromigration lifetime of aluminum interconnects under pulse current stressing. A model has been developed to incorporate damage relaxation and self-heating effects on electromigration. It is shown that self-heating is expected to produce less than 20% error in typical accelerated testing conditions provided the peak current density (J/sub p/) is less than 4*10/sup 6/ A/cm/sup 2/. Design rules based on keeping the average current density (J/sub av/) constant are acceptable provided that duty factor is larger than 1% for all frequencies above 1 MHz.<>