原子层沉积法制备氧化铝层的介电性能和耐辐射性能

2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) Pub Date : 2018-10-01 DOI:10.1109/EEXPOLYTECH.2018.8564381

D. I. Dolzhenko, V. Kapralova, N. Sudar

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引用次数: 1

摘要

研究了ALD法制备的具有Al2O3介电层的mim结构的介电性能。在线性电压增加模式下，这些结构的击穿场强约为4.4 MV/cm，几乎不依赖于电压增加速率。在25 Hz ~ 1 MHz的频率范围内，建立了这些结构的介电常数和介电损耗的频率依赖类型。样品暴露于铯-137的伽马量子后，介电损耗与暴露时间成正比。

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The Dielectric Properties and Radiation Resistance of Aluminum Oxide Layers Obtained by Atomic Layer Deposition

The dielectric properties of MIM-structures with Al2O3 dielectric layers obtained by ALD method have been studied. The breakdown field strength of these structures has been determined to be about 4.4 MV/cm in the linear voltage increase mode and to have virtually no dependence on the voltage increase rate. The type of the frequency dependence of permittivity and dielectric loss of these structures has been established in the frequency range of 25 Hz — 1 MHz. Dielectric loss has been shown to increase upon sample exposure to gamma-quanta of caesium-137 proportionally to exposure time.

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2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech)

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