基于效应场效应的内存多操作数计算

R. Liu, Xiaoyu Zhang, Xiaoming Chen, Yinhe Han, M. Tang
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引用次数: 4

摘要

处理器和内存之间的性能差距造成的“内存墙”瓶颈越来越严重。内存计算(CiM)是一种很有前途的缓解“内存墙”瓶颈的技术,最近引起了人们的广泛关注。基于新兴非易失性器件的传统CiM架构有一个主要缺点,即它们需要${N\,-\,1}$时钟周期来完成具有${N}$操作数的CiM操作,因为它们是为处理两个操作数而设计的。在这项工作中,我们提出了FeMIC,一种基于铁电场效应晶体管(fefet)的新型CiM架构,它本身支持多操作数的计算。对于具有${N}$操作数的CiM操作,FeMIC只需要$\left\lfloor {N/2} \right\rfloor$时钟周期。基于校准的FeFET模型的仿真结果表明,与使用最先进的传统CiM机制相比,FeMIC在处理多操作数CiM操作时可以显着降低能耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FeMIC: Multi-Operands in-Memory Computing Based on FeFETs
The “memory wall” bottleneck caused by the performance gap between processors and memories is getting worse. Computing-in-memory (CiM), a promising technology to alleviate the “memory wall” bottleneck, has recently attracted much attention. Conventional CiM architectures based on emerging nonvolatile devices have a major drawback that they need ${N\,-\,1}$ clock cycles to complete a CiM operation with ${N}$ operands, as they are natively designed for processing two operands. In this work, we propose FeMIC, a new CiM architecture based on ferroelectric field-effect transistors (FeFETs), which natively supports the computation of multiple operands. For a CiM operation with ${N}$ operands, FeMIC only needs $\left\lfloor {N/2} \right\rfloor$ clock cycles. The simulation results based on a calibrated FeFET model reveal that FeMIC can significantly reduce the energy consumption when processing multi-operand CiM operations, compared with state-of-the-arts that use conventional CiM mechanisms.
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