深亚微米沟槽栅PMOSFET特性研究

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Pub Date : 2000-06-24 DOI:10.1109/HKEDM.2000.904234

Hongxia Ren, H. Yue

{"title":"深亚微米沟槽栅PMOSFET特性研究","authors":"Hongxia Ren, H. Yue","doi":"10.1109/HKEDM.2000.904234","DOIUrl":null,"url":null,"abstract":"Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFETs are studied at first, and compared with that of counterpart conventional planar PMOSFETs. Then the characteristics are explained in terms of interior physical parameters distribution.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on the characteristics for deep-sub-micron grooved-gate PMOSFET\",\"authors\":\"Hongxia Ren, H. Yue\",\"doi\":\"10.1109/HKEDM.2000.904234\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFETs are studied at first, and compared with that of counterpart conventional planar PMOSFETs. Then the characteristics are explained in terms of interior physical parameters distribution.\",\"PeriodicalId\":178667,\"journal\":{\"name\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"volume\":\"153 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.2000.904234\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904234","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

基于流体动力能量输运模型，利用二维器件模拟器MEDICI，首先研究了沟槽栅pmosfet的端口电特性，并与传统平面pmosfet进行了比较。然后从内部物性参数分布的角度对其特征进行了解释。

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Study on the characteristics for deep-sub-micron grooved-gate PMOSFET

Based on the hydrodynamic energy transport model, using the 2-dimensional device simulator MEDICI, the port electrical characteristics for grooved-gate PMOSFETs are studied at first, and compared with that of counterpart conventional planar PMOSFETs. Then the characteristics are explained in terms of interior physical parameters distribution.

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来源期刊

Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)

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