A high order temperature compensated band gap reference source based on depletion mode transistor

With the iterative upgrade of electronic products, high precision band gap reference source is becoming the core of its development. Temperature compensation technology is the most important to design a high precision band gap reference source. In recent years, new high order temperature compensation technologies have been proposed. For example, segmental compensation technology, curvature compensation technology, and subthreshold compensation technology are common compensation means. In this paper, a new compensation method is proposed which is to generate the compensating current through the self-opening characteristic of the depletion-mode transistors. It can obtain a band gap reference source with high order compensation. The temperature coefficient can be as low as 3.3ppm/°C in the range of -40°C to 85°C.