基于传导带和价带电子和空穴隧道的栅极和衬底电流建模[CMOS技术]

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852824

Wen-Chin Lee, C. Hu

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引用次数: 97

摘要

提出了一种量化超薄栅极氧化物隧穿电流的模型。该模型通过设定适当的有效质量和势垒高度，可以准确地预测双栅CMOS器件中的栅极和衬底电流以及所有子元件。该模型还可用于以0.1/spl的灵敏度从I-V数据中提取薄氧化物的T/sub - ox/，其中C-V的提取可能很困难或不可能。

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Modeling gate and substrate currents due to conduction- and valence-band electron and hole tunneling [CMOS technology]

A model is proposed to quantify the tunneling currents through ultra-thin gate oxides. With a proper set of effective mass and barrier height, this new model can accurately predict the gate and substrate currents and all the subcomponents in dual-gate CMOS devices. This model can also be employed to extract T/sub ox/ for thin oxide from I-V data with 0.1/spl Aring/ sensitivity, where C-V extraction can be difficult or impossible.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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