GaAs mesfet的1/f体现象噪声理论

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496349

K. T. Yan, L. Forbes

{"title":"GaAs mesfet的1/f体现象噪声理论","authors":"K. T. Yan, L. Forbes","doi":"10.1109/TENCON.1995.496349","DOIUrl":null,"url":null,"abstract":"A 1/f noise model based on the distributed equivalent circuit technique for evaluating the semi-insulating substrate is proposed. Our model shows that the 1/f noise is a bulk phenomena with localized high frequency variations and long range low frequency fluctuations with the lowest frequency being constrained by the thickness of the material.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"1/f bulk phenomena noise theory for GaAs MESFETs\",\"authors\":\"K. T. Yan, L. Forbes\",\"doi\":\"10.1109/TENCON.1995.496349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1/f noise model based on the distributed equivalent circuit technique for evaluating the semi-insulating substrate is proposed. Our model shows that the 1/f noise is a bulk phenomena with localized high frequency variations and long range low frequency fluctuations with the lowest frequency being constrained by the thickness of the material.\",\"PeriodicalId\":425138,\"journal\":{\"name\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TENCON.1995.496349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TENCON.1995.496349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

提出了一种基于分布等效电路技术的1/f噪声模型，用于评价半绝缘衬底。我们的模型表明，1/f噪声是一种体现象，具有局部高频变化和长距离低频波动，最低频率受材料厚度的限制。

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1/f bulk phenomena noise theory for GaAs MESFETs

A 1/f noise model based on the distributed equivalent circuit technique for evaluating the semi-insulating substrate is proposed. Our model shows that the 1/f noise is a bulk phenomena with localized high frequency variations and long range low frequency fluctuations with the lowest frequency being constrained by the thickness of the material.

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1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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