{"title":"非破坏性测定锡化合物的荧光产率和空位转移概率的化学效应","authors":"A. Turşucu, M. Haskul, A. Ulgen","doi":"10.24294/CAN.V1I3.562","DOIUrl":null,"url":null,"abstract":"In the current work, it was investigated to the K X-ray fluorescence efficiency and chemical effect on vacancy transfer probability for some tin compounds. We used Br2Tin, TinI2, SeTin, TinF2, TinSO4, TinCl2, TinO and TinS compounds for experimental study. The target samples were irradiated with 241Am annular radioactive source at the intensity of 5 Ci which emits gamma rays at wavelength of 0.2028 nm. The characteristic x-rays emitted because of the excitation are collected by a high-resolution HPGe semiconductor detector. It has been determined that the experimental calculations of the tin (Sn) element are compatible with the theoretical calculation. In addition, we have calculated the experimental intensity ratios, fluorescence yields and total vacancy transfer probabilitiesfor other Sn compounds. ","PeriodicalId":331072,"journal":{"name":"Characterization and Application of Nanomaterials","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Non-Destructive Determination of Chemical Effects onFluorescence Yields and Vacancy Transfer Probabilities ofTin Compounds\",\"authors\":\"A. Turşucu, M. Haskul, A. Ulgen\",\"doi\":\"10.24294/CAN.V1I3.562\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the current work, it was investigated to the K X-ray fluorescence efficiency and chemical effect on vacancy transfer probability for some tin compounds. We used Br2Tin, TinI2, SeTin, TinF2, TinSO4, TinCl2, TinO and TinS compounds for experimental study. The target samples were irradiated with 241Am annular radioactive source at the intensity of 5 Ci which emits gamma rays at wavelength of 0.2028 nm. The characteristic x-rays emitted because of the excitation are collected by a high-resolution HPGe semiconductor detector. It has been determined that the experimental calculations of the tin (Sn) element are compatible with the theoretical calculation. In addition, we have calculated the experimental intensity ratios, fluorescence yields and total vacancy transfer probabilitiesfor other Sn compounds. \",\"PeriodicalId\":331072,\"journal\":{\"name\":\"Characterization and Application of Nanomaterials\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Characterization and Application of Nanomaterials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.24294/CAN.V1I3.562\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Characterization and Application of Nanomaterials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.24294/CAN.V1I3.562","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Non-Destructive Determination of Chemical Effects onFluorescence Yields and Vacancy Transfer Probabilities ofTin Compounds
In the current work, it was investigated to the K X-ray fluorescence efficiency and chemical effect on vacancy transfer probability for some tin compounds. We used Br2Tin, TinI2, SeTin, TinF2, TinSO4, TinCl2, TinO and TinS compounds for experimental study. The target samples were irradiated with 241Am annular radioactive source at the intensity of 5 Ci which emits gamma rays at wavelength of 0.2028 nm. The characteristic x-rays emitted because of the excitation are collected by a high-resolution HPGe semiconductor detector. It has been determined that the experimental calculations of the tin (Sn) element are compatible with the theoretical calculation. In addition, we have calculated the experimental intensity ratios, fluorescence yields and total vacancy transfer probabilitiesfor other Sn compounds.