65纳米技术的低功耗CMOS压控振荡器

A. Sharma, Saurabh, S. Biswas
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引用次数: 6

摘要

无线设备的可移植性和功率效率是现代设备建模中的两大挑战。压控振荡器(VCO)是无线系统中最重要的电路之一。本文提出了一种基于65nm技术的三级压控振荡器设计,并在片上面积利用率和功耗方面与以往最佳的电流匮乏压控振荡器设计进行了比较。所提出的压控振荡器设计的调谐范围为0.83 ~ 3.77 GHz,比以前的最佳设计节能30-33%。新设计的压控振荡器面积为67.65 μm2,比无电流压控振荡器所需的芯片面积小40.75%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low power CMOS Voltage Controlled Oscillator in 65 nm technology
Wireless device portability and power efficiency are the two major challenges in modern device modeling. Voltage Controlled Oscillator (VCO) is one the most essential circuit used in wireless systems. A new three stage VCO design in 65nm technology is proposed in this paper and is compared with previous best Current starved VCO design on the basis of on-chip area utilization and power consumption. The measured tuning range of the proposed VCO design is 0.83 to 3.77 GHz and it is around 30-33% energy efficient than the previous best design. The new proposed VCO design uses 67.65 μm2 area which is 40.75% less than the chip area required for the fabrication of current starved VCO design.
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