具有70 dB隔离和0.5 dB插入损耗的x波段MMIC开关

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers Pub Date : 1995-05-15 DOI:10.1109/MCS.1995.470982

D. Blackwell, D. Dawson, D. Buck

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引用次数: 9

摘要

一种单极单掷反射MMIC开关，在x波段具有0.5 dB插入损耗和70 dB隔离。为实现开关fet的最佳性能而优化的制造工艺产生了这种特殊的器件。通过选择性地嵌入到FET下方的晶圆背面，将FET的OFF电容降低到1 /spl mu/m以内，从而将FET的OFF电容降低了1.6倍。FET ON电阻保持不变。减小的FET OFF电容允许使用更大的外围FET来获得改进的性能。该设备的Ron-Coff产品比先前报道的结果低30%。

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X-band MMIC switch with 70 dB isolation and 0.5 dB insertion loss

A single-pole, single-throw reflective MMIC switch with 0.5 dB insertion loss and 70 dB isolation over X-band has been demonstrated. A fabrication process that was optimized to achieve the best performance for switch FETs produced this exceptional device. The FET OFF capacitance was reduced by a factor of 1.6 by selectively recessing into the backside of the wafer underneath the FETs to within 1 /spl mu/m of the top surface. The FET ON resistance remained the same. The reduced FET OFF capacitance allowed the use of larger periphery FETs to obtain the improved performance. The Ron-Coff product of this device is 30% lower than previously reported results.<>

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来源期刊

IEEE 1995 Microwave and Millimeter-Wave. Monolithic Circuits Symposium. Digest of Papers

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