非线性共源MESFET行为及模型验证

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493706

G. Passiopoulos, D. Webster, A. Parker, D. Haigh

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引用次数: 1

摘要

本文研究了偏置条件和负载电阻对MESFET共源(CS)放大器中频非线性特性的影响。在测量结果中观察到的失真零化效应为在广泛的偏置条件下评估大信号模型的性能提供了一个很好的标准。MESFET的Parker-Skellern模型用于模拟MESFET电路配置，并对其进行失真测量。该模型预测了观测到的畸变结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Nonlinear common source MESFET behaviour and model validation

In this paper we investigate the effect of bias conditions and load resistance on the nonlinear behaviour of a MESFET Common Source (CS) amplifier at medium frequencies. The distortion nulling effects observed in measured results provide a good criteria for assessing large signal model performance over a wide range of bias conditions. The Parker-Skellern model of the MESFET is used to simulate the MESFET circuit configuration for which the distortion measurements were performed. The model predicts the observed distortion structure.

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Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

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