GaAs HBT失效机理分析:对寿命试验策略的影响

Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 1997-07-21 DOI:10.1109/IPFA.1997.638194

C. Maneux, N. Labat, N. Saysset, A. Touboul, Y. Danto, J. Dumas, P. Launay, J. Dangla

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引用次数: 3

摘要

基于偏压下的加速老化试验，确定了导致GaAs HBT表面电流漂移的场致退化机制。在高温储存下，欧姆接触和金属化的退化尤为突出。这些结果进一步证明了GaAs HBTs中偏压和温度诱导的降解机制。因此，推导出了一种与fet类似的特定寿命测试策略。

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Analysis of GaAs HBT failure mechanisms: impact on life test strategy

A field-induced degradation mechanism responsible for the surface current drift in GaAs HBT is identified on the basis of accelerated ageing tests under bias. Degradations of ohmic contact and metallisation are highlighted under high temperature storage. These results bring further evidence of both bias and temperature-induced degradation mechanisms in GaAs HBTs. As a consequence, a specific life test strategy similar to that implemented for FETs has been derived.

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Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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