ExCL双极技术发展中的尺度问题

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51061

J. Brighton, D. Verret, T.T. Ten Eyck, M.T. Welch, R. E. McMann, M. Torreno, A. Appel, M. Keleher

{"title":"ExCL双极技术发展中的尺度问题","authors":"J. Brighton, D. Verret, T.T. Ten Eyck, M.T. Welch, R. E. McMann, M. Torreno, A. Appel, M. Keleher","doi":"10.1109/BIPOL.1988.51061","DOIUrl":null,"url":null,"abstract":"Several issues encountered in scaling ExCL technology are discussed. It is shown that doping profile scaling below 0.15 mu m base width puts severe restrictions on process latitude. It is demonstrated that the polysilicon emitter resistance can be significantly reduced by rapid thermal annealing. Capacitance calculations show that interconnect-related parasitics do not scale below 3 mu m pitch, and intralevel coupling may provide the ultimate limitation of interconnect scaling. Finally, the ExCL metallization scheme is proven to be scalable to 2 mu m metal pitch.<<ETX>>","PeriodicalId":302949,"journal":{"name":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Scaling issues in the evolution of ExCL bipolar technology\",\"authors\":\"J. Brighton, D. Verret, T.T. Ten Eyck, M.T. Welch, R. E. McMann, M. Torreno, A. Appel, M. Keleher\",\"doi\":\"10.1109/BIPOL.1988.51061\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Several issues encountered in scaling ExCL technology are discussed. It is shown that doping profile scaling below 0.15 mu m base width puts severe restrictions on process latitude. It is demonstrated that the polysilicon emitter resistance can be significantly reduced by rapid thermal annealing. Capacitance calculations show that interconnect-related parasitics do not scale below 3 mu m pitch, and intralevel coupling may provide the ultimate limitation of interconnect scaling. Finally, the ExCL metallization scheme is proven to be scalable to 2 mu m metal pitch.<<ETX>>\",\"PeriodicalId\":302949,\"journal\":{\"name\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-09-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1988.51061\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 1988 Bipolar Circuits and Technology Meeting,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1988.51061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

讨论了扩展ExCL技术时遇到的几个问题。结果表明，在0.15 μ m基宽以下掺杂谱线缩放会严重限制工艺纬度。结果表明，快速热退火可以显著降低多晶硅发射极电阻。电容计算表明，互连相关的寄生效应在3 μ m间距以下不会缩放，电平内耦合可能是互连缩放的最终限制。最后，ExCL金属化方案被证明可扩展到2 μ m的金属间距。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Scaling issues in the evolution of ExCL bipolar technology

Several issues encountered in scaling ExCL technology are discussed. It is shown that doping profile scaling below 0.15 mu m base width puts severe restrictions on process latitude. It is demonstrated that the polysilicon emitter resistance can be significantly reduced by rapid thermal annealing. Capacitance calculations show that interconnect-related parasitics do not scale below 3 mu m pitch, and intralevel coupling may provide the ultimate limitation of interconnect scaling. Finally, the ExCL metallization scheme is proven to be scalable to 2 mu m metal pitch.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

自引率

0.00%

发文量