基于sram的fpga配置位临界性预测分析方法与工具:实验结果

J. Ferron, L. Anghel, R. Leveugle, A. Bocquillon, F. Miller, G. Mantelet
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引用次数: 7

摘要

由于成本和可重构性的原因,在过去几年中,嵌入式系统对基于SRAM的fpga的兴趣有所增加。这种系统可能在恶劣的环境中运行,例如电离辐射,并且应用可能需要高水平的可靠性。当fpga没有采用抗辐射技术开发时,在关键应用中使用它们需要评估修改其配置的后果。本文总结了一种在设计时评估这种FPGA配置文件中各个位的重要性的方法。给出了Atmel元件的实验结果,并与激光故障注入和质子地面试验的实验结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A methodology and tool for predictive analysis of configuration bit criticality in SRAM-based FPGAS: Experimental results
The interest for SRAM based FPGAs has increased in the last few years in embedded systems, due to cost and reconfigurability motivations. Such systems may operate in harsh environments with for example ionizing radiations, and the application may require a high level of dependability. When the FPGAs are not developed on radiation-hardened technologies, using them in critical applications requires evaluating the consequences of modifications in their configuration. This paper summarizes an approach to evaluate at design time the criticality of the various bits in the configuration file of such a FPGA. Results are given on an Atmel component and comparisons are made with experimental results based on laser fault injections and proton ground tests.
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