Ya‐Ze Li, Chun-Jen Shih, E. Chen, Bo-Chi Huang, C. Lee, Jhih-Yan Guo, Shun‐Wei Liu
{"title":"采用升华氯铝酞菁作为电荷产生层的高电流增益有机上转换装置","authors":"Ya‐Ze Li, Chun-Jen Shih, E. Chen, Bo-Chi Huang, C. Lee, Jhih-Yan Guo, Shun‐Wei Liu","doi":"10.1109/AM-FPD.2016.7543637","DOIUrl":null,"url":null,"abstract":"In this work, an efficient organic upconversion device (OUD) employing the bilayer charge generation layer (CGL) of chloroaluminum phthalocyanine (ClAlPc) and C70 was demonstrated. As a result, the current gain ratio of OUD with the sublimated ClAlPc was improved from 1 000 to 40 000 as compared the non-sublimated ones. This is because the mechanism of impurity-induced at the interface of CGL/ITO was mainly dominated the total amount of dark current density in our proposed OUD. Thus, the CGL with poor blocking efficiency might result in an increase in the hole carriers into the device.","PeriodicalId":422453,"journal":{"name":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High current gain organic upconversion device using sublimated chloroaluminum phthalocyanine as a charge generation layer\",\"authors\":\"Ya‐Ze Li, Chun-Jen Shih, E. Chen, Bo-Chi Huang, C. Lee, Jhih-Yan Guo, Shun‐Wei Liu\",\"doi\":\"10.1109/AM-FPD.2016.7543637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, an efficient organic upconversion device (OUD) employing the bilayer charge generation layer (CGL) of chloroaluminum phthalocyanine (ClAlPc) and C70 was demonstrated. As a result, the current gain ratio of OUD with the sublimated ClAlPc was improved from 1 000 to 40 000 as compared the non-sublimated ones. This is because the mechanism of impurity-induced at the interface of CGL/ITO was mainly dominated the total amount of dark current density in our proposed OUD. Thus, the CGL with poor blocking efficiency might result in an increase in the hole carriers into the device.\",\"PeriodicalId\":422453,\"journal\":{\"name\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/AM-FPD.2016.7543637\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/AM-FPD.2016.7543637","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High current gain organic upconversion device using sublimated chloroaluminum phthalocyanine as a charge generation layer
In this work, an efficient organic upconversion device (OUD) employing the bilayer charge generation layer (CGL) of chloroaluminum phthalocyanine (ClAlPc) and C70 was demonstrated. As a result, the current gain ratio of OUD with the sublimated ClAlPc was improved from 1 000 to 40 000 as compared the non-sublimated ones. This is because the mechanism of impurity-induced at the interface of CGL/ITO was mainly dominated the total amount of dark current density in our proposed OUD. Thus, the CGL with poor blocking efficiency might result in an increase in the hole carriers into the device.