基于多极NEM中继的粗粒度可重构阵列的高效路由

Akash Levy, Michael Oduoza, Akhilesh Balasingam, R. Howe, Priyanka Raina
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引用次数: 2

摘要

在本文中,我们建议使用多极纳米机电(NEM)继电器在粗粒度可重构阵列(CGRA)中路由多位信号。我们描述了一种兼容cmos的多极继电器设计,它可以集成在3d中,并且比先前的设计提高了40%的面积利用率。此外,我们展示了一种在继电器上放置多个触点的方法,该方法可以将接触电阻变化减少40倍,而不是圆形放置策略。然后,我们展示了将这些继电器集成到行业标准数字设计流程中的方法。利用我们的多极继电器设计,我们在40纳米技术的混合CMOS-NEMS CGRA中对处理元件(PE)瓦进行了布局后仿真。与纯cmos的PE贴片相比,我们在等延迟下实现了19%的面积降低和10%的功耗降低。结果显示了一种利用NEMS技术弥合可编程逻辑器件(如CGRAs)和特定应用集成电路之间性能差距的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Efficient Routing in Coarse-Grained Reconfigurable Arrays Using Multi-Pole NEM Relays
In this paper, we propose the use of multi-pole nanoelectromechanical (NEM) relays for routing multi-bit signals within a coarse-grained reconfigurable array (CGRA). We describe a CMOS-compatible multi-pole relay design that can be integrated in 3-D and improves area utilization by 40% over a prior design. Additionally, we demonstrate a method for placing multiple contacts on a relay that can reduce contact resistance variation by 40 × over a circular placement strategy. We then show a methodology for integrating these relays into an industry-standard digital design flow. Using our multi-pole relay design, we perform post-layout simulation of a processing element (PE) tile within a hybrid CMOS-NEMS CGRA in 40 nm technology. We achieve up to 19% lower area and 10% lower power at iso-delay, compared to a CMOS-only PE tile. The results show a way to bridge the performance gap between programmable logic devices (such as CGRAs) and application-specific integrated circuits using NEMS technology.
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