{"title":"单轴应变对蓝磷-碳纳米管异质结性能的影响","authors":"A. Mukhopadhyay, A. Sengupta, H. Rahaman","doi":"10.1109/DEVIC.2019.8783399","DOIUrl":null,"url":null,"abstract":"We investigate the effects of uniaxial tensile and compressive strain on the material and transport properties of semiconducting Carbon Nanotube and the device properties of Blue-Phosphorene-CNT heterojunction devices. We see that the material and transport properties of the semiconducting CNT can be tuned through the application of uniaxial strain. The device properties of the heterojunction can also be modulated by strain. The variation in the current is significant in tensile strain zone.","PeriodicalId":294095,"journal":{"name":"2019 Devices for Integrated Circuit (DevIC)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Uniaxial Strain on Properties of Blue Phosphorene-CNT Heterojunction\",\"authors\":\"A. Mukhopadhyay, A. Sengupta, H. Rahaman\",\"doi\":\"10.1109/DEVIC.2019.8783399\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the effects of uniaxial tensile and compressive strain on the material and transport properties of semiconducting Carbon Nanotube and the device properties of Blue-Phosphorene-CNT heterojunction devices. We see that the material and transport properties of the semiconducting CNT can be tuned through the application of uniaxial strain. The device properties of the heterojunction can also be modulated by strain. The variation in the current is significant in tensile strain zone.\",\"PeriodicalId\":294095,\"journal\":{\"name\":\"2019 Devices for Integrated Circuit (DevIC)\",\"volume\":\"190 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 Devices for Integrated Circuit (DevIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DEVIC.2019.8783399\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Devices for Integrated Circuit (DevIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEVIC.2019.8783399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Uniaxial Strain on Properties of Blue Phosphorene-CNT Heterojunction
We investigate the effects of uniaxial tensile and compressive strain on the material and transport properties of semiconducting Carbon Nanotube and the device properties of Blue-Phosphorene-CNT heterojunction devices. We see that the material and transport properties of the semiconducting CNT can be tuned through the application of uniaxial strain. The device properties of the heterojunction can also be modulated by strain. The variation in the current is significant in tensile strain zone.
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