{"title":"SOS mosfet中岛边效应的数值分析","authors":"Q. Lu, Changtong Huang","doi":"10.1109/SOI.1988.95405","DOIUrl":null,"url":null,"abstract":"Degradation of electric characteristics of SOS MOSFETs occurs due to a parasitic transistor in the islands edge. When SOS devices are fabricated with a wet etch process, the island-edge effects are caused by high interface-state densities in the","PeriodicalId":391934,"journal":{"name":"Proceedings. SOS/SOI Technology Workshop","volume":"473 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical analysis of island-edge effects in SOS MOSFETs\",\"authors\":\"Q. Lu, Changtong Huang\",\"doi\":\"10.1109/SOI.1988.95405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Degradation of electric characteristics of SOS MOSFETs occurs due to a parasitic transistor in the islands edge. When SOS devices are fabricated with a wet etch process, the island-edge effects are caused by high interface-state densities in the\",\"PeriodicalId\":391934,\"journal\":{\"name\":\"Proceedings. SOS/SOI Technology Workshop\",\"volume\":\"473 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. SOS/SOI Technology Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1988.95405\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. SOS/SOI Technology Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1988.95405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical analysis of island-edge effects in SOS MOSFETs
Degradation of electric characteristics of SOS MOSFETs occurs due to a parasitic transistor in the islands edge. When SOS devices are fabricated with a wet etch process, the island-edge effects are caused by high interface-state densities in the
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
