用于无源超高频RFID的完全可集成的混合电源管理单元

Menghan Sun, S. Al-Sarawi, P. Ashenden, M. Cavaiuolo, D. Ranasinghe
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引用次数: 3

摘要

本文提出了一种完全集成的混合电源管理单元(HPMU),该单元采用来自GlobalFoundries的130 nm通用CMOS(互补金属氧化物半导体)工艺实现,通过智能管理收集的功率来提高RFID标签的性能,特别是那些具有被动供电传感器的标签。HPMU战略性地利用了超出标签操作要求的多余能量,并将这种能量存储在外部。通过智能电源路由,这种存储的能量用于在断电、冷启动期间维持标签电路的供电电压,并用于读取范围,其中收集的功率不足以为标签逻辑电路供电,但标签距离询问天线足够近,可以期望RFID阅读器接收到反向散射响应。这种方法可以减少冷启动时间,减轻限电的后果,并有效地扩展标签的操作范围和响应性,特别是那些具有被动供电传感器的标签。此外,HPMU在收集到的功率太低而无法保存存储的功率时关闭,这表明查询信号很弱。整个HPMU已经针对低功耗进行了优化,这不仅降低了HPMU引入的功率开销,而且还确保尽可能多的功率被虹吸和存储,而不是在电源管理电路中耗散。在关断状态下,HPMU仅从外部存储元件中消耗约10 nA,在电荷存储模式下,HPMU的峰值转换效率约为65%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A fully integrable hybrid power management unit for passive UHF RFID
This paper presents a fully integrable hybrid power management unit (HPMU) realized in the 130 nm generic CMOS (complementary metal-oxide-semiconductor) process from GlobalFoundries to increase the performance of RFID tags—especially those with passively powered sensors—by intelligently managing harvested power. The HPMU strategically takes advantage of the excess harvested power beyond the operational requirements of a tag and stores this energy externally. Through intelligent power routing, this stored energy is used to sustain the supply voltage of tag circuitry during brownouts, cold starts, and for reading ranges where harvested power is inadequate to power tag logic circuits but the tag distance to an interrogating antenna is close enough to expect a backscattered response to be received by an RFID reader. This approach can reduce cold start-up time, mitigate consequences of brownouts and, effectively, extend the operational range and the responsiveness of tags—especially those with passively powered sensors. In addition, the HPMU switches off when the harvested power, indicative of a weak interrogating signal, is too low to conserve stored power. The entire HPMU has been optimized for low power consumption, which not only reduces the power overhead that HPMU introduces but also ensures that as much power as possible is siphoned and stored rather than dissipated in the power management circuitry. In off state, the HPMU consumes only around 10 nA from the external storage element and during charge storage mode of operation, the HPMU has a peak conversion efficiency of approximately 65%.
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