外加电场在(001)和(111)-外延(K0.5Na0.5) nbo3薄膜中的畴切换

2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP) Pub Date : 2018-07-10 DOI:10.1109/ISAF.2018.8463311

M. Kawano, T. Yamada, S. Matsuo, M. Yoshino, T. Nagasaki, O. Sakata, Y. Imai

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引用次数: 0

摘要

(K1-xNax)NbO3 (KNN)作为一种无铅压电材料尤其受到关注。已知KNN在$x\sim 0.5$处具有向晶相边界(MPB)，表现出较高的压电性能。然而，对于外加电场如何改变KNN的畴结构，目前还没有完全阐明。在本研究中，我们用同步x射线衍射观察了KNN薄膜的电场致应变和畴分数变化。

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Domain Switching by Applied Electric Field in (001) and (111)-epitaxial (K0.5Na0.5)NbO3Films

(K1-xNax)NbO3 (KNN) is especially paid attention to as a lead-free piezoelectric material. It is known that KNN has a morphotropic phase boundary (MPB) at $x\sim 0.5$, which shows a high piezoelectric property. However, it has not been fully clarified how the domain structure of KNN changes by applied electric field. In this study, we observed electric field-induced strain and domain fraction change of KNN films by synchrotron X-ray diffraction.

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2018 IEEE ISAF-FMA-AMF-AMEC-PFM Joint Conference (IFAAP)

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