{"title":"6H-和4h -碳化硅mosfet的高温模拟","authors":"S. F. Shams, K. Sundaram, L. Chow","doi":"10.1109/SECON.1998.673347","DOIUrl":null,"url":null,"abstract":"Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined.","PeriodicalId":281991,"journal":{"name":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High temperature simulation of 6H- and 4H-silicon carbide MOSFETs\",\"authors\":\"S. F. Shams, K. Sundaram, L. Chow\",\"doi\":\"10.1109/SECON.1998.673347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined.\",\"PeriodicalId\":281991,\"journal\":{\"name\":\"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SECON.1998.673347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE Southeastcon '98 'Engineering for a New Era'","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SECON.1998.673347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High temperature simulation of 6H- and 4H-silicon carbide MOSFETs
Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating at two different temperatures has been examined.
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