ECL和BiCMOS应用专用存储器(asm)在单芯片上

J. Houghten
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引用次数: 0

摘要

双极ASIC(专用集成电路)阵列的增加幅度允许单芯片设计高达50 K门。为了充分利用这些单独的芯片系统,必须提供具有大小片上高效存储器架构的高性能ECL双极阵列。讨论了摩托罗拉的MCA4 50 k ECL客户可定义阵列(CDA),通过在单芯片上提供门阵列或ECL(发射极耦合逻辑)双极和BiCMOS自定义存储器的可选半定制部分来满足这些需求。结果表明,访问时间小于2ns的ECL存储器对于高达4kb的配置是实用的。对于更大的存储器,可在50k ECL阵列的一半上实现高达180kb的嵌入式BiCMOS ram。除了过程的灵活性,阵列允许设计者使用瓦片(完全扩散的宏附着在门阵列行网格上)来执行布局技术,作为存储单元和RAM辅助逻辑的基本构建块。讨论了使用嵌入式存储器和大型阵列的含义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
ECL and BiCMOS application specific memories (ASMs) on a single chip
The increasing magnitude of bipolar ASIC (application-specific integrated circuit) arrays allows single-chip designs of up to 50 K gates. To take full advantage of these solitary chip systems, high-performance, ECL, bipolar arrays with large and small on-chip efficient memory architectures must be available. Motorola's MCA4 50 k ECL customer definable array (CDA), an approach that meets these needs through offering gate array or optional semicustom portions of ECL (emitter coupled logic) bipolar and BiCMOS custom memory on a single chip, is discussed. It is shown that ECL memories with less than 2-ns access times are practical for configurations of up to 4 kb. For larger memories, embedded BiCMOS RAMs of up to 180 kb can be implemented on half of an otherwise 50 k ECL array. Besides process flexibility, the array allows the designer to perform layout techniques using tiles (fully diffused macros adhering to the gate array row grid) as fundamental building blocks for the memory cells and RAM auxiliary logic. Implications of using embedded memories and large arrays are addressed.<>
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