多孔InP的生长:从三维结构到二维结构的转变

Z. Weng, An'gang Yuan, Weixun Mi, Wendan Zhang, Cuiting Wu, Zuobin Wang
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引用次数: 3

摘要

本文研究了多孔InP在NaCl溶液中恒流密度的电化学刻蚀过程中从三维到二维的过渡状态。扫描电镜显示的三维结构“节点”与振荡周期一致,光滑曲线对应的是沿方向均匀垂直的孔隙。此外,随着电流密度的增加,振荡的开始和结束时间提前。在此基础上,从表面曲率、扩散控制和反应热三个方面讨论了多孔InP的相变过程。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth of porous InP: Transition from three to two dimensional structures
We present the transition state of porous InP from three to two dimensions, which is explored during electrochemical etching at constant current density in NaCl solutions on n-InP(100) wafers. The `node' of the three dimensional structure revealed by scanning electron microscopy are consistent with the oscillatory periods, and that the smooth curve is corresponding to the uniformly vertical pores along with the <;001> direction. In addition, the onset and end of the oscillations shift ahead of times with increasing current densities. Furthermore, the transition of porous InP was discussed based on the surface curvature, the diffusion-control, and the reactive heat.
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