硅绝缘体技术，器件和挑战

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791584

S. Cristoloveanu

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引用次数: 2

摘要

本文从晶圆制造、器件特性和发展挑战等方面综述了SOI技术。讨论了微电子未来的基本SOI资产，并与体硅技术进行了比较。SOI mosfet有两种类型——完全耗尽和部分耗尽——每一种都由特殊机制控制，下面将简要介绍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Silicon on insulator technology, devices, and challenges

SOI technologies are reviewed in terms of wafer fabrication, device properties, and development challenges. The basic SOI assets for the microelectronics future are discussed and compared to those of bulk-silicon technology. There are two types of SOI MOSFETs-fully-depleted and partially-depleted-each governed by special mechanisms which will be briefly addressed.

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来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

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