gaas基阻塞杂质带探测器的光谱响应特性研究

2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM) Pub Date : 2017-11-01 DOI:10.1109/ICAM.2017.8242148

Chuansheng Zhang, B. Wang, Yulu Chen, Liwei Hou, M. Pan, Xiaodong Wang

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引用次数: 2

摘要

我们开发了一种基于gaas的阻塞杂质波段(BIB)探测器，用于太赫兹(THz)安全检查和天文观测。本文制作了GaAs:Si和GaAs:Te BIB探测器，并分析了它们在3.5K时的光谱响应特性。实验结果表明，当偏置从0.2 v增加到2.8V时，光谱响应增加，峰值波长在190 μm左右。掺杂元素可以在GaAs:Si和GaAs:Te BIB探测器的吸收层中形成多个离散能级，从而在光谱中产生多峰。我们的研究结果显示了基于gaas的BIB探测器作为新型、广谱和高性能太赫兹探测器的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study on the spectral response characteristics of GaAs-based blocked-impurity-band detectors

We have developed a GaAs-based Blocked-Impurity-Band (BIB) Detector for the application of Terahertz (THz) security check and astronomical observation. In this work, we have fabricated GaAs:Si and GaAs:Te BIB detectors and analyzed their spectral response characteristics at 3.5K The experimental results of GaAs:Si BIB device demonstrate that the spectral response increases when the bias rises from 0.2 to 2.8V, and the peak wavelength is around 190 μm. The doping elements can form several discrete energy levels in the absorbing layer of GaAs:Si and GaAs:Te BIB detectors, which induce multi-peaks in the spectra. Our results show the potential of GaAs-based BIB detectors as novel, broad-spectrum, and high-performance THz detectors.

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2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)

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