用于故障识别和分析的大面积半导体器件分层

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI:10.31399/asm.cp.istfa2021p0410

P. Nowakowski, C. Bonifacio, M. Ray, P. Fischione

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引用次数: 0

摘要

本文介绍了宽离子束铣削在半导体器件分层中的发展，该技术提供了毫米尺度上均匀的分层区域。这种尺寸的铣削区域是由用户单独定位离子束以覆盖所需区域的能力实现的。离子束定位的这种灵活性也可以更精确地定位感兴趣的区域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Large Area Semiconductor Device Delayering for Failure Identification and Analyses

This paper presents a development in semiconductor device delayering by broad ion beam milling that offers a uniform delayering area on a millimeter scale. A milling area of this size is made possible by the user's ability to position ion beams individually to cover the desired area. This flexibility in ion beam positioning also enables more precise targeting of an area of interest.

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ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis

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