具有低软误差和良好保留率的CMOS兼容，可形成自由的基于光子的ReRAM !

2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2018-11-01 DOI:10.1109/CICTA.2018.8706027

L. Tai, Xiaoxin Xu, Peng Yuan, Jie Yu, Q. Luo, H. Lv, Ming Liu

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引用次数: 0

摘要

本文采用等离子体N2O热氧化工艺制备了Ru/TaON/WOx/W结构的基于TaON的RRAM。基于TaON的器件显示出低工作电压$(\lt1.8\ mathm {V})$，而无需成形操作。由于氮诱导的灯丝约束，减少了循环过程中的变异性和软误差。基于TaON的RRAM在150°C下也表现出优异的保留性。通过控制顺应电流实现多级存储，激发了基于TaON的器件在超高密度存储器中的应用潜力。

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A CMOS Compatible, Forming Free TaON-based ReRAM with Low Soft Errors and Good Retention!!

In this work, we propose the TaON based RRAM with the structure of Ru/TaON/WOx/W through thermal oxidation process with plasma N2O. The TaON based devices show the low operation voltage $(\lt1.8\mathrm{V})$ without forming operation. Due to the nitrogen induced filament confinement, the variability and soft error during cycling are reduced. The TaON based RRAM also shows the excellent retention at 150 °C. The potential of the TaON based device on ultra-high density memory application inspires by the achievement of the multi-level storage by controlling the compliance current.

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2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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