{"title":"沿轴种子生长的4H-SiC单晶的多型转变","authors":"Xianglong Yang, Yan Peng, Xiufang Chen, Xuejian Xie, Jinying Yu, Xiaobo Hu, Xiangang Xu","doi":"10.1109/SSLChinaIFWS49075.2019.9019806","DOIUrl":null,"url":null,"abstract":"Polytype destabilization at the periphery of 4H-SiC single crystals during the initial stage of 4H-SiC bulk crystals grown on on-axis seeds by sublimation method were investigated. Optical microscopy and Raman spectroscopy, were used to study the distribution of polytypism. Three regions with different Raman peak intensity ratio (I150/I204) at the outer parts of the grown layer are distinctly observed, indicating the increase in parasitic polytype component towards the edge. The higher probability of 6H or 15R-SiC nucleation due to the higher supersaturation at the periphery could be responsible for the polytype transformation.","PeriodicalId":315846,"journal":{"name":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polytype Transformation in 4H-SiC single crystals grown on on-axis Seeds\",\"authors\":\"Xianglong Yang, Yan Peng, Xiufang Chen, Xuejian Xie, Jinying Yu, Xiaobo Hu, Xiangang Xu\",\"doi\":\"10.1109/SSLChinaIFWS49075.2019.9019806\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polytype destabilization at the periphery of 4H-SiC single crystals during the initial stage of 4H-SiC bulk crystals grown on on-axis seeds by sublimation method were investigated. Optical microscopy and Raman spectroscopy, were used to study the distribution of polytypism. Three regions with different Raman peak intensity ratio (I150/I204) at the outer parts of the grown layer are distinctly observed, indicating the increase in parasitic polytype component towards the edge. The higher probability of 6H or 15R-SiC nucleation due to the higher supersaturation at the periphery could be responsible for the polytype transformation.\",\"PeriodicalId\":315846,\"journal\":{\"name\":\"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"volume\":\"64 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019806\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS49075.2019.9019806","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Polytype Transformation in 4H-SiC single crystals grown on on-axis Seeds
Polytype destabilization at the periphery of 4H-SiC single crystals during the initial stage of 4H-SiC bulk crystals grown on on-axis seeds by sublimation method were investigated. Optical microscopy and Raman spectroscopy, were used to study the distribution of polytypism. Three regions with different Raman peak intensity ratio (I150/I204) at the outer parts of the grown layer are distinctly observed, indicating the increase in parasitic polytype component towards the edge. The higher probability of 6H or 15R-SiC nucleation due to the higher supersaturation at the periphery could be responsible for the polytype transformation.