Hany Mahrous, Michael Gad, M. E. Sabbagh, M. Fedawy, W. Fikry
{"title":"优化电极位置的高速电光调制器","authors":"Hany Mahrous, Michael Gad, M. E. Sabbagh, M. Fedawy, W. Fikry","doi":"10.1109/ICCES.2018.8639436","DOIUrl":null,"url":null,"abstract":"A metal-oxide-semiconductor electro-optic modulator is proposed. The modulator is based on silicon-on-insulator technology. The metallic electrodes are positioned in order to minimize the optical absorption losses. This results in the advantages of very small insertion loss of 5.4 dB and very high extinction ratio of 28 dB. Moreover, the modulator design enables future simple fabrication with only one doping mask. The modulator exhibits a very high speed of operation of 100 GHz. The other features of this modulator, such as the size and operating voltage are competitive to other modulators of the same category.","PeriodicalId":113848,"journal":{"name":"2018 13th International Conference on Computer Engineering and Systems (ICCES)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A High-Speed Electro-Optic Modulator with Optimized Electrode Positions\",\"authors\":\"Hany Mahrous, Michael Gad, M. E. Sabbagh, M. Fedawy, W. Fikry\",\"doi\":\"10.1109/ICCES.2018.8639436\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A metal-oxide-semiconductor electro-optic modulator is proposed. The modulator is based on silicon-on-insulator technology. The metallic electrodes are positioned in order to minimize the optical absorption losses. This results in the advantages of very small insertion loss of 5.4 dB and very high extinction ratio of 28 dB. Moreover, the modulator design enables future simple fabrication with only one doping mask. The modulator exhibits a very high speed of operation of 100 GHz. The other features of this modulator, such as the size and operating voltage are competitive to other modulators of the same category.\",\"PeriodicalId\":113848,\"journal\":{\"name\":\"2018 13th International Conference on Computer Engineering and Systems (ICCES)\",\"volume\":\"118 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th International Conference on Computer Engineering and Systems (ICCES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCES.2018.8639436\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th International Conference on Computer Engineering and Systems (ICCES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCES.2018.8639436","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A High-Speed Electro-Optic Modulator with Optimized Electrode Positions
A metal-oxide-semiconductor electro-optic modulator is proposed. The modulator is based on silicon-on-insulator technology. The metallic electrodes are positioned in order to minimize the optical absorption losses. This results in the advantages of very small insertion loss of 5.4 dB and very high extinction ratio of 28 dB. Moreover, the modulator design enables future simple fabrication with only one doping mask. The modulator exhibits a very high speed of operation of 100 GHz. The other features of this modulator, such as the size and operating voltage are competitive to other modulators of the same category.
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